| 摘要 |
<p>On a first light transmissive substrate (12), a first scale mark portion (24) is formed inside an opening portion (22), and on a second light transmissive substrate (32), a second scale mark portion (44) is formed. On the second light transmissive substrate (32), a first metal layer (34), a semiconductor layer (36), and a second metal layer (38) are laminated. A thin film transistor (50) is formed so as to include a part of the first metal layer (34), a part of the semiconductor layer (36), and a part of the second metal layer (38) . The second scale mark portion (44) is formed of another part of the second metal layer (38). Under the second scale mark portion (44), another part of the semiconductor layer (36) is formed so as to extend off from the second scale mark portion (44). Below the second scale mark portion (44) and the semiconductor layer (36), another part of the first metal layer (34) is formed in a size capable of shielding the opening portion (22).</p> |
