| 摘要 |
A nitride semiconductor light emitting diode and a method for fabricating the same are provided to prevent the transition of crystal defect from a lower semiconductor layer to an upper semiconductor layer by implementing a discontinuous layer on lower or upper semiconductor layers. A nitride semiconductor light emitting diode includes a buffer layer(23), a lower semiconductor layer(25) of the first conductive type, a discontinuous layer(27), a upper semiconductor layer(29) of the second conductive type, an active layer(31), and a second conductive semiconductor layer(33). The buffer layer is formed on a substrate(21). The lower semiconductor layer of the first conductive type is formed on the buffer layer. The discontinuous layer is formed on the lower semiconductor layer. The upper semiconductor layer of the second conductive type covers the lower semiconductor layer and discontinuous layer. The active layer is formed on the upper semiconductor layer. The second conductive semiconductor layer is formed on the active layer. |
