| 摘要 |
<p>PURPOSE: A semiconductor memory device including a cell-type power decoupling capacitor and a method of disposing the cell-type power decoupling capacitor are insensitive to noise by stabilizing a power voltage. CONSTITUTION: A cell-type power decoupling capacitor (200) is formed on a semiconductor substrate by using a stack cell capacitor process, stabilizes a power voltage, and provides the power voltage for an internal circuit (150). The cell-type power decoupling capacitor includes a first conductive layer, a second conductive layer, and a dielectric layer. The first conductive layer is connected to a high power voltage. The second conductive layer is connected to a low power voltage and is separated from the first conductive layer at a first distance. The dielectric layer is interposed between the first conductive layer and the second conductive layer.</p> |
