| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to increase the operation speed of a device by omitting a bit line contact plug. CONSTITUTION: A buried gate (120) is formed in a semiconductor substrate. An active region and a device isolation region are defined in the semiconductor substrate. A bit line (140) faces the active region. The bit line intersects with the buried gate. A sealing layer (125) is formed on the upper part of the buried gate. |
