| 摘要 |
<p>PURPOSE: A method for manufacturing a vertical type semiconductor device is provided to improve the operation characteristic of a device by easily removing the sharp corner of a pillar. CONSTITUTION: An insulating layer (106,120) for defining an active region is formed. The active region is etched and separated. A pillar (110) is formed in the separated active region. A gate is formed on the sidewall of the pillar. A bit line (118) is formed in the lower part of a trench.</p> |
