| 摘要 |
PURPOSE: A method for manufacturing a protection layer for a semiconductor quantum dot using graphene is provided to prevent the deformation of the semiconductor quantum dot by preventing the semiconductor quantum dot from being directly exposed to the atmosphere. CONSTITUTION: A plurality of semiconductor quantum dots(20) are dispersed in a first dispersed solution. Graphene(21) is dispersed in a second dispersed solution. A mixture is made by mixing the first dispersed solution with the second dispersed solution in one container. The graphene is attached to the surface of the semiconductor quantum dot in the mixture to form a protection layer for the semiconductor quantum dot. |
