NITRIDE BASED LIGHT EMITTING DIODE WITH IMPROVED CURRENT SPREADING PERFORMANCE AND HIGH BRIGHTNESS

摘要

PURPOSE: A high-brightness nitride light-emitting device with improved current dispersion effects is provided to maximize the current dispersion, thereby improving the brightness. CONSTITUTION: A light emitting device comprises a first semiconductor layer (150), an active layer (160), and a second semiconductor layer (170). A second extension electrode (121) is electrically connected to the second semiconductor layer. A contact hole (110) exposes the first semiconductor layer. A first extension electrode (111) is electrically connected to the exposed first semiconductor layer. An insulating layer (180) electrically insulates the first extension electrode and the second semiconductor layer.