| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide semiconductor material having p-type conductivity, and a photoelectric conversion device manufacture method.SOLUTION: A method includes mixing molybdenum trioxide (MoO) with a reducing agent, heating the mixture under a reduced pressure to reduce part of molybdenum trioxide, and vaporizing molybdenum trioxide and said reduced molybdenum oxide, thereby forming a molybdenum oxide film containing molybdenum oxide of an intermediate composition between molybdenum dioxide and molybdenum trioxide, namely, MoO(2<y<3). |
