| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to improve pinch-off characteristics by preventing the degradation of characteristics due to a trap. CONSTITUTION: A compound semiconductor stacked structure (2) generates a 2D electron gas. An electrode is formed on the upper surface of the compound semiconductor stacked structure. The compound semiconductor stacked structure includes a p-type semiconductor layer. The p-type semiconductor layer is formed under an area where the 2D electron gas is generated. A part of the p-type semiconductor layer under the electrode includes the large amount of ionized acceptors in comparison with the other parts of the p-type semiconductor layer. |
