| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with an SRAM memory cell which can certainly keep a hold state, and to provide a manufacturing method of the semiconductor device.SOLUTION: A polysilicon plug DB 1 (DB 2) connected to a gate electrode TD 1 (TD 2) of a load transistor LTR 1 (LTR 2) in an SRAM memory cell is formed so as to contact a section for thickness of the drain area LD 2 (LD 1) and an upper surface of the drain area LD 2 (LD 1) of a load transistor LTR 2 (LTR 1). |
