PURPOSE: A semiconductor light emitting device stably forms a transparent electrode by forming an adhesive layer within the transparent electrode using graphene and improving the adhesion between the transparent electrode and a lower semiconductor layer. CONSTITUTION: A p-type semiconductor layer (150) faces an n-type semiconductor layer (130). An active layer (140) is formed between the n-type semiconductor layer and the p-type semiconductor layer. A transparent electrode (160) covers at least one among the n-type semiconductor layer and the p-type semiconductor layer. The transparent electrode is composed of a graphene layer (162) and a contact layer (164) passing through the graphene layer. The contact layer is composed of one selected from a group comprising metal, alloy and oxide.
