| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device that can avoid data corruption of a semi-selected state memory cell, and that can achieve a wide operation margin and high integration at the same time without using a single cell access method.SOLUTION: The semiconductor storage device comprises: a read word line, a write word line and a bit line which are arranged in a lattice array; a memory cell disposed at each intersection; and a column selection circuit which connects the bit line with an external data input line and an external data output line in accordance with a column address signal. Each memory cell includes a DFF, and write-side and read-side access transistors. The column selection circuit, in correspondence to each of the bit lines, comprises: a precharge circuit for applying a 1/2 voltage of a power supply voltage to the bit line, or a data holding circuit for latching a logic level voltage of the bit line; and a hold switching circuit for connecting a bit line on which the column address signal is non-selected with the precharge circuit or the data holding circuit when any of write selecting signals is asserted. |
