发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with suppressed chromaticity deviation.SOLUTION: There is provided a semiconductor light-emitting element including a first semiconductor layer of a first conductivity type, a light-emitting layer, a second semiconductor layer of a second conductivity type, first and second conductive pillars, a translucent layer, and a wavelength conversion layer. The first semiconductor layer has a first primary surface having a first portion and a second portion, and a second primary surface located on the opposite side of the first primary surface and having a third portion and a fourth portion around the third portion. The light-emitting layer is located on the first portion. The second semiconductor layer is located on the light-emitting layer. The first conductive pillar is connected to the first semiconductor layer. The second conductive pillar is connected to the second semiconductor layer. A sealing portion covers side surfaces of the first and second conductive pillars. The translucent layer is located on the fourth portion and has translucency. The wavelength conversion layer is located on the third portion and the translucent layer and emits light having a different peak wavelength from light emitted from the light-emitting layer.
申请公布号 JP2013211399(A) 申请公布日期 2013.10.10
申请号 JP20120080257 申请日期 2012.03.30
申请人 TOSHIBA CORP 发明人 HIGUCHI KAZUTO;SHIOZAWA HIDEO;FUJII TAKAYOSHI;KOJIMA AKIHIRO;OBATA SUSUMU;TERADA TOSHIYUKI
分类号 H01L33/50;H01L33/38 主分类号 H01L33/50
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