| 摘要 |
PROBLEM TO BE SOLVED: To provide an inspection method of a periodic table group XIII metal nitride semiconductor substrate capable of inspecting presence or absence of processing flaw on the surface of a semiconductor crystal simply and inexpensively with high precision in a short time, regardless of the size of a measuring object, without consuming a large amount of energy and without contaminating the surface.SOLUTION: The inspection method of a periodic table group XIII metal nitride semiconductor substrate includes an irradiation step for irradiating the surface of a periodic table group XIII metal nitride semiconductor substrate with electromagnetic waves having energy equal to or larger than the band-gap energy of the semiconductor under atmospheric pressure, and an inspection step for determining the intensity of light emitted from the surface of the semiconductor substrate irradiated with the electromagnetic waves in the irradiation step and having a wavelength corresponding to the band end. |
