| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a method capable of processing a desired processed region of a substrate entirely in a short time with high efficiency, by generating plasma stably and efficiently, when performing high temperature heat treatment uniformly for a very short time in the vicinity of the substrate surface, or when performing low temperature plasma processing of a substrate by irradiating the substrate with plasma by reaction gas or irradiating simultaneously with plasma and a reaction gas flow.SOLUTION: In an induction coupling plasma torch unit T, a solenoid coil 3 is disposed in the vicinity of a first quartz block 4 and a second quartz block 5, and the space 7 in a long chamber is annular. A substrate 2 is exposed to plasma P generated in the space 7 of the long chamber, in a long and linear aperture 8 in the long chamber. The substrate 2 is processed by moving the long chamber and a substrate mounting table 1 relatively, in a direction perpendicular to the longitudinal direction of the aperture 8. |
