| 摘要 |
PROBLEM TO BE SOLVED: To provide a composite substrate having a high-performance semiconductor layer.SOLUTION: The composite substrate comprises: a support substrate 10 composed of insulating single crystals; a semiconductor layer 20 which is composed of single crystals and overlaps a top face of the support substrate 10; and an intermediate layer 30 which is positioned between the support substrate 10 and the semiconductor layer 20 and consists primarily of elements which compose the support substrate 10 and which has lower crystallinity compared with the support substrate 10. |
