| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor epitaxial wafer capable of achieving a growth of a nitride semiconductor crystal with good reproducibility in which a surface pit never occurs without being affected by a surface state of an SiC substrate.SOLUTION: A method for manufacturing a nitride semiconductor epitaxial wafer in which an AlN buffer layer 12 is formed on an SiC substrate 11 and a nitride semiconductor crystal is formed on the AlN buffer layer 12 comprises the steps of: forming a metal layer by supplying a metal material containing aluminium to a surface of the SiC substrate 11; forming a fine crystal nucleus on the SiC substrate 11 by performing heat treatment for the metal layer in a gas atmosphere containing ammonia; and forming the AlN buffer layer 12 on the fine crystal nucleus. |
