发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can obtain high reliability.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a foundation layer 28a by a lift-off method; a process of providing a metal layer 29 on a whole surface including the foundation layer 28a; a process of forming a mask 36 including a pattern which covers the foundation layer 28a on the metal layer 29 and forming an Au layer 28b by etching the metal layer 29; a process of providing on the Au layer 28b, an insulation film 22 having a level difference 22a which reflects a level difference 28d formed by the Au layer 28b; and a process of providing a metal layer 30 at a position which covers the level difference 22a of the insulation film 22.
申请公布号 JP2013211484(A) 申请公布日期 2013.10.10
申请号 JP20120082034 申请日期 2012.03.30
申请人 SUMITOMO ELECTRIC DEVICE INNOVATIONS INC 发明人 NISHI SHINKO
分类号 H01L29/41;H01L21/28;H01L21/338;H01L29/06;H01L29/778;H01L29/812 主分类号 H01L29/41
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