发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can obtain high reliability.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a foundation layer 28a by a lift-off method; a process of providing a metal layer 29 on a whole surface including the foundation layer 28a; a process of forming a mask 36 including a pattern which covers the foundation layer 28a on the metal layer 29 and forming an Au layer 28b by etching the metal layer 29; a process of providing on the Au layer 28b, an insulation film 22 having a level difference 22a which reflects a level difference 28d formed by the Au layer 28b; and a process of providing a metal layer 30 at a position which covers the level difference 22a of the insulation film 22. |
申请公布号 |
JP2013211484(A) |
申请公布日期 |
2013.10.10 |
申请号 |
JP20120082034 |
申请日期 |
2012.03.30 |
申请人 |
SUMITOMO ELECTRIC DEVICE INNOVATIONS INC |
发明人 |
NISHI SHINKO |
分类号 |
H01L29/41;H01L21/28;H01L21/338;H01L29/06;H01L29/778;H01L29/812 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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