发明名称 MONOLITHIC INTEGRATION OF CMOS AND NON-SILICON DEVICES
摘要 A method includes attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer. The second wafer comprises a first region including a material different from silicon. The method also includes forming devices in the first region or in a second region of the combined wafer having a material different from silicon.
申请公布号 WO2013152176(A1) 申请公布日期 2013.10.10
申请号 WO2013US35249 申请日期 2013.04.04
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 FITZGERALD, EUGENE, A.
分类号 H01L29/66;H01L21/44;H01L21/8238 主分类号 H01L29/66
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