| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to suppress the leakage of a current flowing between a source electrode and a drain electrode by controlling the potential of a buffer layer using an embedded electrode. CONSTITUTION: A buffer layer (16) is formed on the upper surface of a substrate. An electron transiting layer (17) and an electron supply layer (18) are formed on the upper surface of the buffer layer. A gate electrode, a source electrode, and a drain electrode are formed on the upper surface of the electron supply layer. An embedded electrode (14) receives a potential independent of the gate electrode, the source electrode, and the drain electrode. The embedded electrode controls the potential of the buffer layer. |
