发明名称 Reduction of Capping Layer Resistance Area Product for Magnetic Device Applications
摘要 A ferromagnetic layer is capped with a metallic oxide (or nitride) layer that provides a perpendicular-to-plane magnetic anisotropy to the layer. The surface of the ferromagnetic layer is treated with a plasma to prevent diffusion of oxygen (or nitrogen) into the layer interior. An exemplary metallic oxide layer is formed as a layer of metallic Mg that is plasma treated to reduce its grain size and enhance the diffusivity of oxygen into its interior. Then the plasma treated Mg layer is naturally oxidized and, optionally, is again plasma treated to reduce its thickness and remove the oxygen rich upper surface.
申请公布号 US2013264665(A1) 申请公布日期 2013.10.10
申请号 US201213441158 申请日期 2012.04.06
申请人 JAN GUENOLE;TONG RU-YING;HEADWAY TECHNOLOGIES, INC. 发明人 JAN GUENOLE;TONG RU-YING
分类号 H01L29/82;H01L21/02 主分类号 H01L29/82
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