METAL GATE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THEREOF

摘要

PURPOSE: A metal gate semiconductor device and a manufacturing method thereof are provided to reduce manufacturing costs by removing a metal layer depositing process, an etching process, and a metal CMP process. CONSTITUTION: A first work function metal layer is formed on a first region (202) of a substrate (206). A metal layer is formed on a second region (204) and the first work function metal layer. A dummy layer (606) is formed on the metal layer. A first gate structure is formed on the first region. A second gate structure is formed on the second region. The metal layer is exposed by removing the dummy layer. The metal layer is processed.