TRANSISTOR, SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR MODULE INCLUDING THE SAME

摘要

PURPOSE: A transistor, a semiconductor device, and a semiconductor module including the same improve the resistance characteristics of wiring including a gate electrode of a transistor by composing the gate electrode with two or more conductive materials having different work functions. CONSTITUTION: A field region (7) limits an active region (9) by being formed within a substrate (1). A first source/drain region (60) and a second source/drain region (87) are separated from each other within the active region. A gate trench (18) includes a first part (18a) crossing the active region and a second part (18b) in the field region. A gate structure (GS) is formed within the gate trench. The gate structure includes a gate electrode (36), a gate capping pattern (45), a gate dielectric (24), and a metal-containing material film (39). The metal-containing material film is formed between the gate capping pattern and the active region.