发明名称 |
SYMMETRIC PLASMA PROCESSING CHAMBER |
摘要 |
PROBLEM TO BE SOLVED: To provide a symmetric plasma processing chamber which improves electrical and thermal symmetry of gas flow for improved plasma uniformity control.SOLUTION: A plasma processing apparatus includes: a lid assembly 110 and a chamber body 142 which enclose a process region 102; and a substrate support assembly 160 disposed in the chamber body 142. The substrate support assembly 160 includes: a pedestal base 162 disposed in a center region 156 of the chamber body 142 which is fluidically sealed from the process region 102; a lower electrode 161 supported by the pedestal base 162; and an operation assembly 163 disposed in the center region 156 and formed so as to vertically move the lower electrode 161 over a given distance. |
申请公布号 |
JP2013211269(A) |
申请公布日期 |
2013.10.10 |
申请号 |
JP20130079246 |
申请日期 |
2013.04.05 |
申请人 |
APPLIED MATERIALS INC |
发明人 |
JAMES D CARDUCCI;HAMID TABASSOLI;BALAKRISHNA AJIT;CHEN ZHIGANG;NGUYEN ANDREW;DOUGLAS A BUCHBERGER JR;KARTIK RAMASWAMY;RAUF SHAHID;COLLINS KENNETH S |
分类号 |
H05H1/46;C23C16/509;H01L21/205;H01L21/3065;H01L21/31;H01L21/683 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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