发明名称 SYMMETRIC PLASMA PROCESSING CHAMBER
摘要 PROBLEM TO BE SOLVED: To provide a symmetric plasma processing chamber which improves electrical and thermal symmetry of gas flow for improved plasma uniformity control.SOLUTION: A plasma processing apparatus includes: a lid assembly 110 and a chamber body 142 which enclose a process region 102; and a substrate support assembly 160 disposed in the chamber body 142. The substrate support assembly 160 includes: a pedestal base 162 disposed in a center region 156 of the chamber body 142 which is fluidically sealed from the process region 102; a lower electrode 161 supported by the pedestal base 162; and an operation assembly 163 disposed in the center region 156 and formed so as to vertically move the lower electrode 161 over a given distance.
申请公布号 JP2013211269(A) 申请公布日期 2013.10.10
申请号 JP20130079246 申请日期 2013.04.05
申请人 APPLIED MATERIALS INC 发明人 JAMES D CARDUCCI;HAMID TABASSOLI;BALAKRISHNA AJIT;CHEN ZHIGANG;NGUYEN ANDREW;DOUGLAS A BUCHBERGER JR;KARTIK RAMASWAMY;RAUF SHAHID;COLLINS KENNETH S
分类号 H05H1/46;C23C16/509;H01L21/205;H01L21/3065;H01L21/31;H01L21/683 主分类号 H05H1/46
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