| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having high electrical characteristics even having a fine structure with good yield; and achieve high performance, high reliability and high productivity in a semiconductor device including the transistor.SOLUTION: In a semiconductor device having a transistor including a semiconductor film, a gate insulation film and a gate electrode layer having a side wall insulation layer on lateral faces, a source electrode layer and a drain electrode layer are provided in contact with the semiconductor film and the side wall insulation layer. A manufacturing method of the semiconductor device comprises: stacking a conductive film and an oxide insulation film so as to cover the semiconductor film, the side wall insulation layer and the gate electrode layer; performing first polishing of cutting (grinding, polishing) the oxide insulation film by using an alkaline slurry; and performing second polishing of cutting (grinding, polishing) the conductive film by using an acid slurry to remove a part of the gate electrode layer and the conductive film on the gate electrode layer thereby to form the source electrode layer and the drain electrode layer. |
