PZT FERROELECTRIC THIN FILM AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a PZT ferroelectric thin film capable of having high life reliability, while having dielectric characteristic equivalent to a conventional ferroelectric thin film, and a method for manufacturing the same.SOLUTION: A PZT ferroelectric thin film formed on a bottom electrode of a substrate having the bottom electrode whose crystalline plane is oriented in a (111) axial direction, comprises: an orientation control layer formed on the bottom electrode and having a film thickness whose crystal orientation is preferentially controlled on a (100) face, within a range of 45nm to 150nm; and a film thickness adjustment layer formed on the orientation control layer and having the same crystal orientation as the orientation control layer, and a boundary face is formed between the orientation control layer and the film thickness adjustment layer.