| 摘要 |
This semiconductor device performs drive control of a high-potential side switching element, and is provided with: one level-shift circuit which raises the signal level of a low-side input signal and outputs said signal as a high-side signal; a pulse modulation circuit which operates in the low-side area, generates data symbols comprising two or more bits and representing a set signal or a reset signal, and outputs the digital symbol as an input signal of the level shift circuit, wherein one bit is defined as a combination comprising a pair of H and L symbols; a pulse demodulation circuit which operates in the high-side area, demodulates the data symbol outputted from the level shift circuit, and generates an already level-shifted set signal or reset signal; and a control circuit which controls conductance in the high-potential side switching element on the basis of the set signal or reset signal outputted from the pulse demodulation circuit. |
