| 摘要 |
<p>PURPOSE: A composition for resist lower layer film formation and a pattern forming method are provided to enhance reservation stability and coating defect improvement property. CONSTITUTION: A composition for forming resist lower layer film comprises polysiloxane and a solvent. The solvent is a compound represented by chemical formula 1 or carbonate compound and includes an organic solvent having standard boiling point of 150 deg. Celsius or higher. In the chemical formula 1, R^1 and R^2 respectively represents hydrogen atom, C1-4 alkyl group or C1-4 acyl group. R^3 is hydrogen atom or methyl group. N is an integer of 1-4. If n is 2 or higher, multiple R^3 can be same or different.</p> |
