FIELD EFFECT TRANSISTOR, MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR, INTERMEDIATE BODY, AND SECOND INTERMEDIATE BODY

摘要

PROBLEM TO BE SOLVED: To provide an organic field effect transistor having low drive voltage, a sufficiently high current amplification factor, and high responsiveness ("frequency at which capacitance decreases to 1/10 in modulation frequency of gate voltage of 10 Hz" of 10 kHz or more).SOLUTION: An organic field effect transistor generally comprises a source electrode 5, a drain electrode 4, an organic semiconductor layer 3 in contact with the electrodes, a gate insulating layer 6 adjacent to the organic semiconductor layer, and a gate electrode 7 in contact with the gate insulating layer 6. The gate insulating layer 6 is in a liquid state without including paste or thickener, and includes ionic liquid as the main component.