发明名称 TRANSISTOR
摘要 A transistor includes: a semiconductor substrate; a first electrode on the semiconductor substrate and having first and second portions; a second electrode on the semiconductor substrate and spaced apart from the first electrode; a control electrode on the semiconductor substrate and disposed between the first electrode and the second electrode; and a first heat sink plate joined to the second portion of the first electrode without being joined to the first portion of the first electrode.
申请公布号 US2013264682(A1) 申请公布日期 2013.10.10
申请号 US201313763798 申请日期 2013.02.11
申请人 SASAKI YOSHINOBU;KURUSU HITOSHI;MITSUBISHI ELECTRIC CORPORATION 发明人 SASAKI YOSHINOBU;KURUSU HITOSHI
分类号 H01L27/04;H01L29/73 主分类号 H01L27/04
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