| 摘要 |
<p>Methods and apparatus for controlling plasma in a plasma, processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coii disposed concentrically with respect to the firsi/center RF coil, and a RF coil set having at least a third/mid. RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coii in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (reiative to the direction of the currents provided to the first/center RF coil and the second'edge RF coil) is provided to the third/mid RF coil.</p> |
