| 摘要 |
<p>A semiconductor device (100A) has a gate electrode (3) formed on a substrate (2), a gate insulation layer (4) formed on the gate electrode, an oxide layer (50) formed on the gate insulation layer and including a semiconductor region (51) and a conductor region (55), a source electrode (6s) and drain electrode (6d) electrically connected to the semiconductor region, a protective layer (11) formed on the source electrode and drain electrode, and a transparent electrode (9) formed on the protective layer. At least a portion of the transparent electrode is superposed on the conductor region via the protective layer, and a top surface of the conductor region is adjacent to a reducing insulation layer (61) having the property of reducing an oxide semiconductor included in the oxide layer. The reducing insulation layer is not adjacent to a channel region of the semiconductor region.</p> |
