LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>Provided is a light emitting diode having a nanostructure capping pattern and a method of manufacturing the same. A light-emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers is provided. A nanostructure is provided on the light-emitting structure and a nanostructure capping pattern covering the nanostructure is provided. A refractive index of the nanostructure capping pattern is higher than that of air and lower than that of the nanostructure.</p>
