SOL-GEL SOLUTION FOR FERROELECTRIC THIN FILM FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a sol-gel solution for ferroelectric thin film formation which makes possible to increase thickness of a layer formed by one coat according to a sol-gel method when forming a PZT-based ferroelectric thin film, and to arrange a PZT film having a crack-free, dense film structure even after preliminary and regular baking processes.SOLUTION: The sol-gel solution for ferroelectric thin film formation comprises: a PZT-based compound; a polyvinylpyrrolidone-containing polymer compound for viscosity control; and an organic dopant containing a formamide-based solvent. The sol-gel solution includes no less than 17 mass% of the PZT-based compound in terms of oxide. The molar ratio of the PZT-based compound to the polyvinylpyrrolidone is arranged so as to be 1:0.1 to 0.5 in terms of monomers. The formamide-based solvent accounts for 3-13 mass% of the sol-gel solution. The sol-gel solution arranged like this makes possible: to increase the thickness of a layer formed by one coat; to increase the production efficiency; and to form a dense film having no crack even after preliminary and regular baking processes.