MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL

摘要

PURPOSE: A method of manufacturing a thin film transistor array panel prevents the corrosion of wiring and the generation of a residual metal film by forming a thin film transistor using fluorinated gas not containing sulfur. CONSTITUTION: A gate line including a gate electrode is formed on a substrate. A gate insulating film covering the gate line is formed. A semiconductor material layer is formed on the gate insulating film. A data wiring material layer is formed on the semiconductor material layer. A first photoresist pattern is formed on the data wiring material layer. A second photoresist pattern is formed by etching back the first photoresist pattern.