THIN FILM TRANSISTOR SUBSTRATE HAVING METAL OXIDE SEMICONDUCTOR

摘要

PURPOSE: A thin film transistor substrate having a metal oxide semiconductor is provided to improve the reliability of a device by performing different compensation for a stress. CONSTITUTION: A substrate includes a first region and a second region. A first thin film transistor (Tp) is formed on the first region. The first thin film transistor has a first threshold voltage characteristic. A second thin film transistor (Tg) is formed in the second region. The second thin film transistor has a second threshold voltage characteristic.