发明名称 METHOD FOR FORMING ORGANIC SEMICONDUCTOR LAYER AND BASE MATERIAL WITH SUPPORT MEMBER INCLUDING ORGANIC SEMICONDUCTOR LAYER ARRANGED ON BASE MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a method for forming an organic semiconductor layer capable of preventing dirt from adhering to a surface of the organic semiconductor layer or preventing the surface from being damaged.SOLUTION: A method for forming an organic semiconductor layer 25 comprises the steps of: supplying a base material 22; arranging a plurality of support members 26 on an upper surface 22a or a lower surface 22b of the base material 22; forming a plurality of organic semiconductor layers 25 including an organic semiconductor material in order on the upper surface 22a of the base material 22; and winding the base material 22 in which the semiconductor layer 25 is formed. The support member 26 is thicker than the organic semiconductor layer 25. In the support member arrangement step, the support members 26 are arranged so that at least one of the support members 26 is allocated to one of the organic semiconductor layers 25.
申请公布号 JP2013211396(A) 申请公布日期 2013.10.10
申请号 JP20120080215 申请日期 2012.03.30
申请人 DAINIPPON PRINTING CO LTD 发明人 SAKATA MAKIKO;TAKEDA TOSHIHIKO
分类号 H01L27/28;H01L21/336;H01L29/786;H01L51/05;H01L51/40;H01L51/42 主分类号 H01L27/28
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