NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device that achieves uniformity of characteristics within a wafer surface and improves the yield.SOLUTION: A substrate 10 includes a defect concentration region 11 and a low defect region 12 that is a region excluding the defect concentration region 11. Only in the low defect region 12, a trench region 14b that is deeper than the surface of the low defect region 12 is formed in one side of the defect concentration region 11.