发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the following problems: since past technologies in IPS require a large number of processes and achieve only low opening ratios, they are hardly practical; there are too many wires and electrodes in a layer most adjacent to a liquid crystal layer; and the electrical field applied to each liquid crystal in a pixel display part is non-uniform.SOLUTION: Gate lines 102, 105 and common lines 103, 104 are first formed simultaneously, and after forming an interlayer film, a pixel electrode 108, common electrodes 110, 111, and source lines 106, 107 are formed simultaneously. Thus, the electrode pattern can be simplified and the processes can be simple. The wires and the electrodes in the layer most adjacent to the liquid crystal layer are made to be the pixel electrodes, the common electrodes, and the source lines, and their shapes are simplified.
申请公布号 JP2013210652(A) 申请公布日期 2013.10.10
申请号 JP20130104056 申请日期 2013.05.16
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ZHANG HONGYONG;HIRAKATA YOSHIHARU;OTSUKA KENJI;YAMAZAKI SHUNPEI;KUWABARA HIDEAKI
分类号 G02F1/1368;G02F1/1343;H01L21/336;H01L29/786 主分类号 G02F1/1368
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