发明名称 Output Transistor Leakage Compensation for Ultra Low-Power LDO Regulator
摘要 Circuits and methods to compensate leakage current of a LDO are disclosed. The compensation is achieved by a temperature dependent sink current generation, which has a nearly zero current consumption increase of about 50 nA at room temperature and starts sink current at temperatures about above 85 to 100 degrees Celsius, which is corresponding to a range of temperature wherein leakage currents come into account,
申请公布号 US2013265020(A1) 申请公布日期 2013.10.10
申请号 US201213443920 申请日期 2012.04.11
申请人 KRENZKE RAINER;DIALOG SEMICONDUCTOR GMBH 发明人 KRENZKE RAINER
分类号 G05F1/46 主分类号 G05F1/46
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