发明名称 |
LOW EXTENSION DOSE IMPLANTS IN SRAM FABRICATION |
摘要 |
<p>A static random access memory fabrication method includes forming a gate stack on a substrate, forming isolating spacers adjacent the gate stack, the isolating spacers and gate stack having a gate length, forming a source and drain region adjacent the gate stack, which generates an effective gate length, wherein the source and drain regions are formed from a low extension dose implant that varies a difference between the gate length and the effective gate length.</p> |
申请公布号 |
WO2013151625(A2) |
申请公布日期 |
2013.10.10 |
申请号 |
WO2013US26779 |
申请日期 |
2013.02.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG, LELAND;LIN, CHANG-HSUN;LO, SHIH-HSIEN;SLEIGHT, JEFFREY W. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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