| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves reliability and productivity by inhibiting deterioration in insulation reliability and the like, which is caused based on variation in a depth direction of a reformed region of an insulation resin layer.SOLUTION: A semiconductor device of an embodiment comprises: an insulation resin layer 5 which is provided on a semiconductor substrate 2 having a first wiring layer 3 and which has an opening 6 for exposing a part of the first wiring layer 3; and a second wiring layer 7 provided on the insulation resin layer 5. The second wiring layer 7 is composed of an electroless metal plating film. The insulation resin layer 5 includes a laminated film of a first resin layer 10 and a second resin layer 12. The electroless metal plating film has an anchor layer 14 generated by immersion of plated metal into the insulation resin layer 5. The anchor layer 14 is formed only in the second resin layer 11. |
