| 摘要 |
PROBLEM TO BE SOLVED: To form all-polymer TFT devices by depositing from solutions all components of the devices including semiconducting layers, dielectric layers and conducting electrodes and internal connections.SOLUTION: After source-drain electrodes 2, 3 are formed by ink-jet printing, a first material is deposited from a solution in a first solvent, to form an active semiconducting polymer 4, and subsequently a gate insulating layer 5 is deposited by spin-coating a solution of a polar solvent in which the semiconducting polymer 4 is not soluble. Then, a gate electrode 6 is deposited on the gate insulating layer 5. |
