| 摘要 |
PROBLEM TO BE SOLVED: To improve performance of a semiconductor device.SOLUTION: A semiconductor device comprises: a trench-gate MISFET and a diode which are formed on a semiconductor substrate SUB; trenches TR1, TR2 formed in the semiconductor substrate SUB; a gate electrode GE formed in the trench TR1 via a gate insulation film GI; a dummy gate electrode GED formed in the trench TR2 via a dummy gate insulation film GID; and an ntype semiconductor region NR2 for a cathode of the diode and a p type semiconductor region for an anode of the diode which are formed on the semiconductor substrate SUB. The trench TR2 is formed so as to surround the ntype semiconductor region NR2 in planar view. A part of the p type semiconductor region for the anode is formed just below the ntype semiconductor region NR2 and a diode is formed by PN junction being formed between the p type semiconductor region and the ntype semiconductor region NR2. The dummy gate electrode GED is electrically connected to either of the anode or the cathode. |
