发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially flush with an upper surface of said gate; forming an interface layer to cover at least the upper surface of said gate such that the upper surface of said gate is protected from being oxidized; and forming a second dielectric interlayer on said interface layer.
申请公布号 US2013264616(A1) 申请公布日期 2013.10.10
申请号 US201313911805 申请日期 2013.06.06
申请人 SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION 发明人 WANG XINPENG;HUANG YI;CHANG SHIH-MOU
分类号 H01L23/00;H01L29/78 主分类号 H01L23/00
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