发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially flush with an upper surface of said gate; forming an interface layer to cover at least the upper surface of said gate such that the upper surface of said gate is protected from being oxidized; and forming a second dielectric interlayer on said interface layer.
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申请公布号 |
US2013264616(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201313911805 |
申请日期 |
2013.06.06 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION |
发明人 |
WANG XINPENG;HUANG YI;CHANG SHIH-MOU |
分类号 |
H01L23/00;H01L29/78 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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