发明名称 AMOLED WITH N-TYPE TFT
摘要 A stratified organic light-emitting diode structure includes a thin-film transistor (40) and an organic light-emitting diode (OLED) (60). The OLED (60) is fabricated on a planarization layer (50) that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) (60) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer (50) covers the thin-film transistor entirely and the planarization layer (50) on top of the thin-film transistor is also covered by an insulation layer (52). In order to electrically connect the top electrode of the OLED (60) to the drain terminal (36) of the thin-film transistor (40), an opening (150) is made through both the top insulating layer (52) and the planarization layer (50) to expose part of the drain terminal (36). Spacers (71, 72) with uniform height are fabricated on the top insulating layer (52) to protect the pixel structure.
申请公布号 WO2013149495(A1) 申请公布日期 2013.10.10
申请号 WO2013CN00231 申请日期 2013.03.05
申请人 AU OPTRONICS CORPORATION 发明人 HSIEH, HSINGHUNG
分类号 H01L27/32 主分类号 H01L27/32
代理机构 代理人
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