| 摘要 |
PURPOSE: A memory device and a memory unit are provided to improve the stability of a middle resistance value by forming an ion source layer which includes chalcogen elements, oxygen, and transition metal elements as a memory layer. CONSTITUTION: A memory layer (20) includes a first electrode and an ion source layer (21). The ion source layer includes chalcogen elements, oxygen, and transition metal elements. The transition metal elements are selected among a fourth group element, a fifth group element, and a sixth group element. The quantity of the oxygen is between 10% and 55%. A ratio of the transition metal elements to the chalcogen elements is between 3:7 and 7:3. |
