| 摘要 |
PURPOSE: A compound semiconductor device and a manufacturing method thereof are provided to securely implement a normally off operation by securing a large stage drain current without a variation. CONSTITUTION: A p-type semiconductor layer (3) is formed on the upper surface of a compound semiconductor stacked structure. An electrode is formed on the upper surface of the p-type semiconductor layer. An inert element is injected into both sides of the electrode on the p-type semiconductor layer. The injection part of the inert element is inactivated. A protection insulation layer (4) covers the injection part of the inert element. [Reference numerals] (4a,6a,6b) Electrode recess; (7) Source electrode; (8) Drain electrode; (9) Gate insulation film |
