SEMICONDUCTOR MEMORY AND METHOD OF OPERATING SEMICONDUCTOR MEMORY

摘要

PURPOSE: A semiconductor memory device and an operating method of the semiconductor memory device improve cell holding characteristics by controlling a reference potential to be low. CONSTITUTION: A first precharge circuit (16-1) couples a reference potential generating circuit (12) with a first bit line pair to precharge the first bit line pair to a reference potential. A first equalizer circuit equalizes the first bit line pair. A first sense amplifier is coupled to the first bit pair to amplify a voltage difference of the first bit line pair during activation. A second sense amplifier is coupled to a second bit line pair to amplify a voltage difference of the second bit line pair during activation. [Reference numerals] (12) Reference potential generating circuit; (13) Dummy bit line potential generating circuit; (AA) Reference potential controlling circuit