| 摘要 |
<p>PURPOSE: A semiconductor memory device prevents bridging, pitting, and leaning generated between a cell region and a peripheral region. CONSTITUTION: A substrate (100) includes a cell region (CR) and a peripheral region. A word line (WL) includes an electric charge storage part and a control gate electrode (WG1) successively provided to the cell region. A peripheral transistor is formed on the peripheral region. The control gate electrode and the peripheral transistor include a high-carbon semiconductor pattern (152, 155) and a low-carbon semiconductor pattern (132, 135) on the high-carbon semiconductor pattern. The carbon concentration of the high-carbon semiconductor pattern is 3-10 times of the carbon concentration of the low-carbon semiconductor pattern.</p> |
